RWTH Aachen - Institut für Theoretische Elektrotechnik
Semiconductor devices are the basis of all electronic applications: from smartphones over photovoltaics and high-speed data transfer to power electronics for electromobility. Therefore, a fundamental physical understanding of these devices on a microscopic level is desirable in order to improve currently applied technologies as well as to figure out the capabilities of possible future devices.
At the Chair of Electromagnetic Theory, we conduct research on physical models for semiconductor devices, we develop numerical methods for that purpose and we perform microscopic simulations of such devices on our own computer cluster.
The teaching of our institute covers the lectures about electromagnetic fields for bachelor students and specialized courses in semiconductor device simulations for master students.
You will work on developing a microscopic model to simulate the operation of Redox-based random-access memories (ReRAM). As an emerging non-volatile memory device, ReRAM is expected to overcome the limitations of the semiconductor-based NVMs such as scalability and power consumption.
Optimization of the performance of these devices with respect to reliability, retention time and scalability is one of the main issues facing ReRAM. Understanding the origin of these operational challenges and its mechanisms is the main goal, which is needed to be addressed in this work. Studying these effects requires a large number of repeated simulations, which demands a fast yet accurate method to simulate the device operation. To this end you will use the KMC method to handle this with reasonable computational power and CPU time.
You will join the third period of the project ‘collaborative research center 917 (SFB 917 Nanoswitches)’, a large interdisciplinary research project involving chemistry, material sciences, physics and electrical engineering. In the first period of this project a simulation framework was developed to model the resistive switching in ReRAM. You will use this model as a base and improve the involved physical processes and the conduction mechanisms.
A university degree (master or comparable) in electrical engineering or physics with above average results is mandatory.
Experiences in electronic devices, semiconductor physics, numerical mathematics and high-performance computing are appreciated.
Since you will work in an international team, the capacity for team work as well as good English skills, written and spoken, are required.
What we offer:
The position is for 3 years and is to be filled as soon as possible. This is a full-time position.
The successful candidate has the opportunity to pursue a doctoral degree.
The salary corresponds to level EG 13 TV-L.
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